 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor product specification silicon npn power transistors BDX35 description ? ? with to-126 package ? high current (max: 5a) applications ? high current switching in power applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 60 v v ebo emitter -base voltage open collector 5 v i c collector current (dc) 5 a i cm collector current-peak 10 a i bm base current-peak 2 a p t total power dissipation t mb ?75 ?? 15 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-a thermal resistance from junction to ambient 100 k/w r th j-mb thermal resistance from junction to mounting base 5 k/w
inchange semiconductor product specification 2 silicon npn power transistors BDX35 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat-1 collector-emitter saturation voltage i c =5a; i b =0.5a 0.9 v v cesat-2 collector-emitter saturation voltage i c =7a; i b =0.7a 1.2 v v besat-1 base-emitter saturation voltage i c =5a; i b =0.5a 1.7 v v besat-2 base-emitter saturation voltage i c =7a; i b =0.7a 2.0 v i cbo collector cut-off current v cb =80v; i e =0 t j =100 ?? 0.1 10 | a i ebo emitter cut-off current v eb =5v; i c =0 0.1 | a h fe dc current gain i c =0.5a ; v ce =10v 45 450 c c collector capacitance i e =0;v cb =10v ;f=1mhz 40 pf f t transition frequency i c =0.5a; v ce =5v ;f=100mhz 100 mhz switching times i c on =1a;i b on =-i b off =0.1a 60 100 i c on =2a;i b on =-i b off =0.2a 80 t on turn-on time i c on =5a;i b on =-i b off =0.5a 180 300 ns i c on =1a;i b on =-i b off =0.1a 600 800 i c on =2a;i b on =-i b off =0.2a 450 700 t off turn-off time i c on =5a;i b on =-i b off =0.5a 350 500 ns inchange semiconductor product specification 3 silicon npn power transistors BDX35 package outline fig.2 outline dimensions |
Price & Availability of BDX35
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |